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- W1996383691 abstract "A method of preparing high back voltage silicon by bombarding the surface with oxygen has been devised and a new type of point contact diode prepared. The diode is characterized by: (1) very low saturation currents of the order of 1 microampere, (2) high inverse operating voltages (70-200v), (3) very low barrier capacitance (<0.3μ f) and rapid recovery times, and (4) operation at elevated temperatures up to 200 degrees C." @default.
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- W1996383691 date "1955-01-01" @default.
- W1996383691 modified "2023-09-26" @default.
- W1996383691 title "A New High Temperature Silicon Diode" @default.
- W1996383691 cites W2048016665 @default.
- W1996383691 doi "https://doi.org/10.1109/jrproc.1955.278077" @default.
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