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- W1996488803 abstract "This paper presents a methodology for modeling the electric field distribution in the vertical direction of VDMOS power transistors, considering the effects of cell spacing and drain voltage. An accurate and consistent extraction technique is developed to extract the values of various important parameters based on non-linear and multivariable regression techniques for the first time. The generalized form of electric field distribution enables the physical modeling of drain current at the onset of quasi-saturation considering the effect of non-uniform electron distribution in the n-epi region. Results so obtained are in good agreement with PISCES simulation over wide range of device parameters. The proposed model will be highly suitable for CAD (Computer Aided Design) tools in HVIC applications." @default.
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- W1996488803 date "2003-01-01" @default.
- W1996488803 modified "2023-09-27" @default.
- W1996488803 title "Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor" @default.
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- W1996488803 doi "https://doi.org/10.1016/s0026-2692(02)00140-4" @default.
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