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- W1996514148 abstract "This paper reports the effect of annealing on hydrogenated amorphous silicon films (a-Si : H) deposited by r.f. self-bias technique on cathode in an asymmetric r.f. plasma CVD system at room temperature. Detailed study of the variation of the dark and photoconductivity (σD and σph) as a function of temperature and light intensity, surface morphology, hydrogen evolution, optical absorption, subgap absorption and related parameters, thermal and structural disorder on the optical-absorption edge, IR vibrational modes and bonded hydrogen content have been carried out on unannealed and annealed samples at different temperatures (Ta) from 100°C to 550°C. It is found that the values of σph increase and that of Urbach energy (Eo), subgap defect density (Nd) and the polyhydride to monohydride ratio decrease upto Ta=250°C and beyond 250°C the values of σph decrease and that of Eo, Nd and the polyhydride to monohydride ratio increase. The best opto-electronic properties with much improved σph and σph/σD and dominant monohydride bonding are obtained after annealing the room temperature deposited film at 250°C for 1 h. The σD data obeys a Meyer Neldel rule in annealed a-Si : H films. The value of optical band gap is found to be related to the Eo and the hydrogen content. The Urbach energy (Eo) which is a measure of the disorder is the sum of structural and thermal disorder. The structural disorder part decreases with the annealing temperature upto ∼300°C and thereafter it increases. The curves of optical absorption coefficient versus photon energy at different Ta converge to a common point." @default.
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- W1996514148 date "1999-04-01" @default.
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- W1996514148 title "Effect of annealing on the electrical, optical and structural properties of hydrogenated amorphous silicon films deposited in an asymmetric R.F. plasma CVD system at room temperature" @default.
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- W1996514148 doi "https://doi.org/10.1016/s0927-0248(98)00193-7" @default.
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