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• W1996536698 abstract "Photocarrier diffusion in Si at ambient temperature in the carrier density range of $4ifmmodetimeselsetexttimesfi{}{10}^{17}$ to $4ifmmodetimeselsetexttimesfi{}{10}^{19}{mathrm{cm}}^{mathrm{ensuremath{-}}3}$ has been characterized by the transient grating technique. Measurements show a strong density dependence in ambipolar diffusivity with a minimum of $4.7{mathrm{cm}}^{2}{mathrm{}mathrm{s}}^{mathrm{ensuremath{-}}1},$ a factor of 4 lower than the intrinsic value, at ${10}^{19}{mathrm{cm}}^{mathrm{ensuremath{-}}3}.$ The decrease is a result of carrier-carrier scattering at high densities. Measurements on both a Si(111) surface (reflection geometry) and a Si film (transmission geometry) indicate that there is no significant surface effect in diffusivity for carriers generated near the surface." @default.
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• W1996536698 date "1997-12-15" @default.
• W1996536698 modified "2023-09-25" @default.
• W1996536698 title "Photoexcited carrier diffusion near a Si(111) surface: Non-negligible consequence of carrier-carrier scattering" @default.
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• W1996536698 doi "https://doi.org/10.1103/physrevb.56.15252" @default.
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