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• W1996552441 abstract "A novel contact structure comprising of TiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1.22</sub> /Ni/Au has been deposited on Ga-doped and In-doped zinc oxide (ZnO) epilayer grown on a yttria-stabilized ZrO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> substrate. It is found that the contact resistivity ρ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> is around 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-7</sup> Ω cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> for heavily doped ZnO, whereas a ρ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> value of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-5</sup> Ω cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> is achieved for ZnO with light doping concentration. Attributed to the barrier effect of TiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1.22</sub> intermediate layers, thermal annealing does not change the contact resistivity, but it is affected significantly by different surface treatments (atomic oxygen or nitrogen). For atomic oxygen-treated ZnO surface, the carrier density is increased, which leads to lower contact resistivity. It is shown that the contact structure of TiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1.22</sub> /Ni/Au with TiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1.22</sub> as the intermediate layer can provide a high-quality ohmic contact with low ρ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> and good thermal stability." @default.
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• W1996552441 date "2011-12-01" @default.
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• W1996552441 title "Fabrication of a $hbox{TiN}_{x}/hbox{Ni/Au}$ Contact on ZnO Films With High Thermal Stability and Low Resistance" @default.
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• W1996552441 doi "https://doi.org/10.1109/ted.2011.2169265" @default.
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