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• W1996568927 abstract "Ultra-small bulk FinFETs (dual-well and triple-well) from a commercial process have been exposed to total ionizing dose. The devices have varying numbers of fins and channel length. The devices show a significant increase in off-state leakage current, threshold voltage shift, transconductance and subthreshold slope degradation after irradiation to 300 krad(SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ). The results also show a strong dependence of fin-to-fin variation and trapped charge in the STI on the radiation response of the devices." @default.
• W1996568927 created "2016-06-24" @default.
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• W1996568927 date "2013-04-01" @default.
• W1996568927 modified "2023-09-30" @default.
• W1996568927 title "Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs" @default.
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• W1996568927 doi "https://doi.org/10.1109/irps.2013.6532115" @default.
• W1996568927 hasPublicationYear "2013" @default.
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