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- W1996646543 endingPage "5257" @default.
- W1996646543 startingPage "5255" @default.
- W1996646543 abstract "Spin dependent tunnel and spin-valve devices were made using rf diode sputtering, with patterning done using standard semiconductor photolithography techniques. In order to tailor the pinning strength of the hard magnetic layers, three types of structures were tried: (1) NiFeCo/spacer/CoFe; (2) NiFeCo/spacer/CoFe/IrMn; and (3) NiFeCo/spacer/CoFe/Ru/CoFe/FeMn, with Al2O3 or Cu as spacers. The magnetoresistance of the spin dependent tunnel devices is up to 24% with a switching field of a few Oe for the free layer of NiFeCo. The saturation fields of the hard layers are a few tens, a few hundreds, and a few thousands of Oe for the three structures, respectively. The first structure is suitable for magnetic memory applications with the hard layer storing the information. The second structure is suitable for magnetic field sensors which must function after relatively high magnetic field excursions. The third structure makes use of the synthetic antiferromagnet of CoFe/Ru/CoFe in addition to the antiferromagnet (FeMn) to achieve the highest pinning field. It also reduces the fringing field to the free layer caused by the pinned layer, due to the flux closure of the two ferromagnetic layers in the synthetic antiferromagnet. This third structure is especially suitable for field sensor applications in environments with excursions of very high magnetic fields between sensing operations." @default.
- W1996646543 created "2016-06-24" @default.
- W1996646543 creator A5024316726 @default.
- W1996646543 creator A5027208935 @default.
- W1996646543 creator A5036516837 @default.
- W1996646543 creator A5037727789 @default.
- W1996646543 creator A5084596053 @default.
- W1996646543 date "1999-04-15" @default.
- W1996646543 modified "2023-10-16" @default.
- W1996646543 title "Spin dependent tunnel/spin-valve devices with different pinning structures made by photolithography" @default.
- W1996646543 cites W1967393072 @default.
- W1996646543 cites W2028003034 @default.
- W1996646543 cites W2029210868 @default.
- W1996646543 cites W2031152316 @default.
- W1996646543 cites W2110168759 @default.
- W1996646543 cites W2118581009 @default.
- W1996646543 cites W2143544323 @default.
- W1996646543 cites W2151475820 @default.
- W1996646543 doi "https://doi.org/10.1063/1.369958" @default.
- W1996646543 hasPublicationYear "1999" @default.
- W1996646543 type Work @default.
- W1996646543 sameAs 1996646543 @default.
- W1996646543 citedByCount "19" @default.
- W1996646543 crossrefType "journal-article" @default.
- W1996646543 hasAuthorship W1996646543A5024316726 @default.
- W1996646543 hasAuthorship W1996646543A5027208935 @default.
- W1996646543 hasAuthorship W1996646543A5036516837 @default.
- W1996646543 hasAuthorship W1996646543A5037727789 @default.
- W1996646543 hasAuthorship W1996646543A5084596053 @default.
- W1996646543 hasConcept C105487726 @default.
- W1996646543 hasConcept C115260700 @default.
- W1996646543 hasConcept C117958382 @default.
- W1996646543 hasConcept C118316555 @default.
- W1996646543 hasConcept C121332964 @default.
- W1996646543 hasConcept C155355069 @default.
- W1996646543 hasConcept C192562407 @default.
- W1996646543 hasConcept C26873012 @default.
- W1996646543 hasConcept C49040817 @default.
- W1996646543 hasConcept C56202322 @default.
- W1996646543 hasConcept C62520636 @default.
- W1996646543 hasConcept C82217956 @default.
- W1996646543 hasConceptScore W1996646543C105487726 @default.
- W1996646543 hasConceptScore W1996646543C115260700 @default.
- W1996646543 hasConceptScore W1996646543C117958382 @default.
- W1996646543 hasConceptScore W1996646543C118316555 @default.
- W1996646543 hasConceptScore W1996646543C121332964 @default.
- W1996646543 hasConceptScore W1996646543C155355069 @default.
- W1996646543 hasConceptScore W1996646543C192562407 @default.
- W1996646543 hasConceptScore W1996646543C26873012 @default.
- W1996646543 hasConceptScore W1996646543C49040817 @default.
- W1996646543 hasConceptScore W1996646543C56202322 @default.
- W1996646543 hasConceptScore W1996646543C62520636 @default.
- W1996646543 hasConceptScore W1996646543C82217956 @default.
- W1996646543 hasIssue "8" @default.
- W1996646543 hasLocation W19966465431 @default.
- W1996646543 hasOpenAccess W1996646543 @default.
- W1996646543 hasPrimaryLocation W19966465431 @default.
- W1996646543 hasRelatedWork W1920782138 @default.
- W1996646543 hasRelatedWork W1984900360 @default.
- W1996646543 hasRelatedWork W2054078207 @default.
- W1996646543 hasRelatedWork W2057947030 @default.
- W1996646543 hasRelatedWork W2082240646 @default.
- W1996646543 hasRelatedWork W2241268274 @default.
- W1996646543 hasRelatedWork W2242273843 @default.
- W1996646543 hasRelatedWork W2906617170 @default.
- W1996646543 hasRelatedWork W3100318781 @default.
- W1996646543 hasRelatedWork W3105936837 @default.
- W1996646543 hasVolume "85" @default.
- W1996646543 isParatext "false" @default.
- W1996646543 isRetracted "false" @default.
- W1996646543 magId "1996646543" @default.
- W1996646543 workType "article" @default.