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- W1996670992 abstract "Memory devices based on <bold>4N4OPz</bold> exhibit excellent ternary memory behavior with high ON2/ON1/OFF current ratios and low switching threshold voltage." @default.
- W1996670992 created "2016-06-24" @default.
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- W1996670992 date "2014-01-01" @default.
- W1996670992 modified "2023-10-16" @default.
- W1996670992 title "Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance" @default.
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- W1996670992 doi "https://doi.org/10.1039/c4mh00022f" @default.
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