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• W1996718516 abstract "Hot wall epitaxy using a Bi2Se3 source is carried out on the surface of transition metals. Bismuth is replaced dramatically with the substrate atoms for Cu, Ag and Ni. The substitution is complete for Cu and Ag, yielding, respectively, CuSe and Ag2Se instead of Bi2Se3. A fractal growth that can be induced on Cu evidences diffusion of copper in the CuSe crystals over tens of micrometers. In contrast, selenium is expelled from the Bi2Se3 lattice on the Au surface. We demonstrate that a limit on the copper inclusion in Bi2Se3 microcrystals can be imposed by utilizing a Cu-doped glass as the substrate." @default.
• W1996718516 created "2016-06-24" @default.
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• W1996718516 date "2011-06-08" @default.
• W1996718516 modified "2023-10-14" @default.
• W1996718516 title "Substitution of bismuth in hot wall epitaxy of Bi₂Se₃on transition metals" @default.
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• W1996718516 doi "https://doi.org/10.1088/0268-1242/26/8/085031" @default.
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