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- W1996804673 abstract "Deep-level transient spectroscopy (DLTS) measurements are reported for the well-studied carbon (C) and oxygen (O) related centers with activation energy around E v + 0.36 eV irradiated p-Si. Comparisons of the concentrations of this defect state with those of carbon interstitial (C i ) defect state in pulled and float-zone material have been considered. The results yield some new insight concerning the C i involvement in reactions with primary defects and other impurities a) during and after low-temperature irradiation and b) after annealing around room temperature." @default.
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- W1996804673 date "1988-11-01" @default.
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- W1996804673 title "Aspects of the Defect Reactions Related to Carbon Impurity in Silicon" @default.
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- W1996804673 doi "https://doi.org/10.1143/jjap.27.2089" @default.
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