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- W1996815275 abstract "Molecular dynamics (MD) simulations were performed to investigate F+ continuously bombarding SiC surfaces with energies of 100 eV at different incident angles at 300 K. The simulated results show that the steady-state uptake of F atoms increases with increasing incident angle. With the steady-state etching established, a Si-C-F reactive layer is formed. It is found that the etching yield of Si is greater than that of C. In the F-containing reaction layer, the SiF species is dominant with incident angles less than 30°. For all incident angles, the CF species is dominant over CF2 and CF3." @default.
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- W1996815275 date "2012-12-01" @default.
- W1996815275 modified "2023-09-27" @default.
- W1996815275 title "Angular Effects on F+Etching SiC: MD Study" @default.
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- W1996815275 doi "https://doi.org/10.1088/1009-0630/14/12/12" @default.
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