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- W1996896475 abstract "Abstract A numerical study of free and forced convection in the melt during the LEC growth of GaAs has been carried out. The free convection results from heating of the melt at the crucible wall and the forced convection from the crystal and crucible rotations. The study shows that the convective flow in the melt is multi-cellular and often oscillatory. This leads to temperature oscillations in the melt near the crystal-melt interface which can result in fluctuations in the growth rate of the crystal." @default.
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- W1996896475 date "1989-02-01" @default.
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- W1996896475 title "Numerical study of free and forced convection in the LEC growth of GaAs" @default.
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- W1996896475 doi "https://doi.org/10.1016/0022-0248(89)90030-4" @default.
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