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- W1996900859 abstract "Abstract In this work we demonstrate a light emitting diode (LED) with m ‐plane quantum wells fabricated on a (000 $ bar 1 $ ) template. N‐polar, n‐type GaN was grown by MOCVD on vicinal sapphire substrates. Stripes, measuring 500 nm wide, 500 nm tall and spaced 2 μm apart, were etched parallel to the 〈11 $ bar 2 $ 0〉 direction leading to sidewalls that are approximately {10 $ bar 1 $ 0}. Sputtered AlN was used as a regrowth mask on the c ‐plane surfaces. An active region consisting of 5 InGaN quantum wells and GaN barriers followed by p‐type was grown. The regrowth occurred mostly on the exposed m ‐plane sidewalls, leading to lateral growth in the 〈10 $ bar 1 $ 0〉 direction. The LED was processed using conventional methods. A thick metal contact was used to connect the p‐regions together. Current vs. voltage measurements showed good rectifying behavior with a turn on of about 6 volts. On‐wafer electroluminescence measurements revealed a peak wavelength of 422 nm. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W1996900859 date "2008-07-01" @default.
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- W1996900859 title "<i>M</i> ‐plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on <i>c</i> ‐plane patterned templates" @default.
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- W1996900859 doi "https://doi.org/10.1002/pssc.200779284" @default.
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