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• W1996955868 startingPage "705" @default.
• W1996955868 abstract "In this study, electrical properties of Al2O3 deposited by Atomic Layer Deposition (ALCVD) on n-type 4H-SiC were investigated. Metal-Oxide-Semiconductor (MOS) capacitors were characterized by various electrical techniques such as Capacitance-Voltage (CV), Current- Voltage (IV) and Deep Level Transient Spectroscopy (DLTS) measurements. Two different oxidants, H2O and O3, have been used for the oxide deposition. After deposition, the flat-band voltage shift is much less using O3 than H2O (~ 7V versus ~ 20V). Annealing treatment has been carried out at different temperatures in Ar atmosphere up to 700°C. Whereas the flat-band voltage shift can be reduced by annealing, the leakage current remains rather high." @default.
• W1996955868 created "2016-06-24" @default.
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• W1996955868 date "2005-05-01" @default.
• W1996955868 modified "2023-10-02" @default.
• W1996955868 title "Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC" @default.
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• W1996955868 doi "https://doi.org/10.4028/www.scientific.net/msf.483-485.705" @default.
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