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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1996992035> ?p ?o ?g. }

• W1996992035 abstract "A La2O3 capping scheme has been developed to obtain n-type band-edge metal gates on Hf-based gate dielectrics. The viability of the technique is demonstrated using multiple metal gates that normally show midgap work function when deposited directly on HfSiO. The technique involves depositing a thin interfacial of La2O3 on a Hf-based gate dielectric prior to metal gate deposition. This process preserves the excellent device characteristic of Hf-based dielectrics, but also allows the realization of band-edge metal gates. The effectiveness of the technique is demonstrated by fabricating fully functional transistor devices. A model is proposed to explain the effect of La2O3 capping on metal gate work function." @default.
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• W1996992035 date "2006-12-04" @default.
• W1996992035 modified "2023-10-17" @default.
• W1996992035 title "Work function engineering using lanthanum oxide interfacial layers" @default.
• W1996992035 cites W1969266655 @default.
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• W1996992035 doi "https://doi.org/10.1063/1.2396918" @default.
• W1996992035 hasPublicationYear "2006" @default.
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