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• W1997006409 abstract "We describe a novel chemical vapor deposition (CVD) procedure for depositing a Pd activation layer for subsequent electroless Cu deposition. The two-step process uses a continuous precursor transfer step followed by a batch reduction step to achieve efficient utilization of the Pd precursor. The resulting activation layer contains both isolated clusters (ca. average diam) and also dispersed species that appear to be stabilized by residual (hfac) fragments. The activation layer produces growth rates for Cu electroless deposition that are similar to values reported for Pd activation layers prepared using wet chemical methods. The Cu growth rate is independent of the cluster density, which suggests that Cu nucleation occurs at both clusters and the dispersed species. The Cu films shows poor adhesion upon drying, which we attribute to weak film attachment at the sites." @default.
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• W1997006409 date "2007-01-01" @default.
• W1997006409 modified "2023-10-18" @default.
• W1997006409 title "Batch CVD Process for Depositing Pd Activation Layers" @default.
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• W1997006409 doi "https://doi.org/10.1149/1.2430648" @default.
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