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W1997026280 abstract "* Ion-Stimulated Processes * Transmutation Doping of Semiconductors by Charged Particles * Doping of Semiconductors Using Radiation Defects * Formation of Buried Porous and Damaged Layers" @default.
W1997026280 created "2016-06-24" @default.
W1997026280 creator A5044633577 @default.
W1997026280 creator A5065798196 @default.
W1997026280 date "2005-01-01" @default.
W1997026280 modified "2023-09-25" @default.
W1997026280 title "Radiation Defect Engineering" @default.
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