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- W1997072670 abstract "Self-assembled Si1−xGex islands were studied in detail using atomic force microscopy. The self-assembled Si1−xGex islands were formed by a novel two-step process. First, highly strained Si1−xGex thin films (with x∼0.4) were selectively grown on a silicon wafer by chemical vapor deposition at 650 °C. The growth was followed by an annealing step performed in hydrogen at 750 °C at reduced pressure conditions for specific times. The size and distribution of the islands was found to be a function of the annealing conditions and an ordered pattern could be achieved with specific annealing conditions. This growth process shows a new way of creating device islands, which are confined within oxide regions and could be ordered, for applications in optical and electronic devices on silicon." @default.
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- W1997072670 date "2001-03-01" @default.
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- W1997072670 title "Atomic force microscopy studies of self-assembled Si1−xGex islands produced by controlled relaxation of strained films" @default.
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- W1997072670 doi "https://doi.org/10.1116/1.1354976" @default.
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