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- W1997076278 abstract "Abstract Thin silicon oxynitride (SiO x N y ) films were synthesised without substrate heating by means of N 2 + ion-beam sputtering of a silicon nitride target at an energy of 1000 eV in a N 2 and O 2 ambient with and without 200 eV N 2 + ion assistance. Unassisted films were deposited in a controlled O 2 partial pressure ranging from ambient to 5.0 × 10 −3 Pa whereas assisted films were deposited at a fixed O 2 partial pressure of 1.0 × 10 −3 Pa. The O/(O+N) atomic fraction and the SiO x N y asymmetric stretch mode IR absorption peak wavenumber of unassisted films increased almost linearly with increasing O 2 partial pressure, from 0.2 to 1.0 and 860 cm −1 to 1050 cm −1 , respectively, while their refractive indices decreased from 1.92 to 1.46. The behaviour of the SiO x N y film refractive index with the SiO 2 fraction has been compared to that predicted by Drude, Lorentz-Lorenz and Bruggeman models under the assumption that the film is a mixture of SiO 2 and Si 3 N 4 phases. For a fixed O 2 partial pressure, the O content of the N 2 + ion-assisted films increased with an increase in the N + ion to Si atom arrival ratio from 0 to 3. This increase in O content correlate with changes in the film refractive index and SiO x N y asymmetric stretch mode absorption peak position, from 1.56 to 1.43 and 1014 cm −1 to 1054 cm −1 , respectively, indicating that the O/N atomic ratio increases with increasing N + ion to Si atom ratio until film properties consistent with stoichiometric SiO 2 are obtained." @default.
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- W1997076278 date "1997-05-01" @default.
- W1997076278 modified "2023-09-27" @default.
- W1997076278 title "Synthesis of silicon oxynitride by ion beam sputtering and the effects of nitrogen ion-assisted bombardment" @default.
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- W1997076278 doi "https://doi.org/10.1016/s0168-583x(96)00959-7" @default.
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