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- W1997094906 abstract "A ballistic electron emission microscopy facility has been used to investigate hot electron transport through Au/M/Au and Au/M thin films (M = Fe, Co) grown on GaAs(100) substrates. The hot electron attenuation through the Au/Fe/Au trilayer roughly exhibited an exponential relationship with Fe interlayer thickness. Two values of Fe thickness (0.4 and 0.85 nm) were used to compare the differences between Fe embedded at the centre of the Au layer and Fe at the metal–semiconductor interface. For the thicker Fe layer, there is a large difference in terms of the transmitted ballistic electrons between the two structures, with the 'at-interface' structure exhibiting substantially increased transmission. This difference was not found in the Au/Co system with comparable Co thickness. The results suggest that the behaviour of transmitted hot electrons is dominated by the formation of the continuous metal layers with strong scattering at the metal–metal interfaces." @default.
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- W1997094906 date "2003-09-15" @default.
- W1997094906 modified "2023-10-16" @default.
- W1997094906 title "A ballistic electron emission microscopy study of ferromagnetic thin films embedded in Au/GaAs(100)" @default.
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- W1997094906 doi "https://doi.org/10.1088/0953-8984/15/38/016" @default.
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