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• W1997101596 abstract "The valence band (VB) electronic structures of CrSi2 were studied by synchrotron radiation photoemission. Overall features of the VB photoemission spectra measured at room temperature (RT) and 20 K by using synchrotron radiation (photon energy, hν=20–120 eV) were similar. Two characteristic emissions were observed corresponding to the bonding and the nonbonding Cr-d partial density of states (PDOS) in the CrSi2. The onset of the VB photoemission measured at 20 K was located at about 0.32 eV below Fermi level, due to the energy band gap of CrSi2 more than 0.32 eV." @default.
• W1997101596 created "2016-06-24" @default.
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• W1997101596 date "1999-08-01" @default.
• W1997101596 modified "2023-09-24" @default.
• W1997101596 title "The electronic structures of epitaxial CrSi2 film prepared on Si(111) substrate" @default.
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• W1997101596 doi "https://doi.org/10.1016/s0169-4332(99)00251-2" @default.
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