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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1997141706> ?p ?o ?g. }

• W1997141706 abstract "Dual-gate single-electron transistors were fabricated on the silicon-on-insulator (100). Although the structure of the dual-gate single-electron transistors was previously introduced, several process parameters were modulated in this work to reduce the total capacitance of the quantum dot and increase the operation temperature. In the room-temperature transfer characteristics of the fabricated device, Coulomb oscillation peaks were visible, which indicates decrease in the quantum dot size compared to previous work." @default.
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• W1997141706 date "2008-06-01" @default.
• W1997141706 modified "2023-10-17" @default.
• W1997141706 title "Fabrication and improved characteristics of self-aligned dual-gate single-electron transistors" @default.
• W1997141706 cites W1986342779 @default.
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• W1997141706 doi "https://doi.org/10.1109/snw.2008.5418433" @default.
• W1997141706 hasPublicationYear "2008" @default.
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