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- W1997155278 abstract "We present two approaches to integrate magnetic materials with III–V semiconductors. One is epitaxial ferromagnetic metallic films and heterostructures on GaAs (0 0 1) substrates. Although crystal structure, lattice constant, chemical bonding and other properties are dissimilar, ferromagnetic hexagonal MnAs thin films and MnAs/NiAs ferromagnet/nonmagnet heterostructures (HSs) are grown on GaAs by molecular beam epitaxy (MBE). Multi-stepped magnetic hysteresis are controllably realized in MnAs/NiAs HSs, making this material promising for the application to multi-level nonvolatile recording on semiconductors. The other approach is to prepare a new class of GaAs based magnetic semiconductor, GaMnAs, by low-temperature molecular beam epitaxy (LT-MBE) on GaAs (0 0 1). New III–V based superlattices consisting of ferromagnetic semiconductor GaMnAs and nonmagnetic semiconductor AlAs are also successfully grown. Structural and magnetic properties of these new heterostructures are presented." @default.
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- W1997155278 date "1998-07-01" @default.
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- W1997155278 title "Epitaxial ferromagnetic thin films and heterostructures of Mn-based metallic and semiconducting compounds on GaAs" @default.
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- W1997155278 doi "https://doi.org/10.1016/s1386-9477(98)00078-2" @default.
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