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• W1997163886 abstract "Engineering the porosity of silicon nanowires (SiNWs) is of fundamental importance, and this work introduces a new method for doing so. Metal-assisted chemical etching (MACE) of heavily doped Si(100) creates mesoporous silicon nanowires (mp-SiNWs). mp-SiNWs are transferred from the MACE-treated wafer to a sticky tape, leaving residues composed of broken mp-SiNWs and a mesoporous Si layer on the wafer. Then the taped wafer is re-treated by MACE, without changing the etching conditions. The second MACE treatment generates mp-SiNWs that are less porous and longer than those generated by the first MACE treatment, which can be attributed to the difference in the surface topography at the beginning of the etching process. Less porous mp-SiNWs reduce optical scattering from the porous Si skeletons, and vertically protrude on the wafer without aggregation to facilitate optical trapping. Consequently, less porous mp-SiNWs effectively reduce ultraviolet-visible reflection loss." @default.
• W1997163886 created "2016-06-24" @default.
• W1997163886 creator A5008191957 @default.
• W1997163886 creator A5054683555 @default.
• W1997163886 date "2015-04-15" @default.
• W1997163886 modified "2023-09-26" @default.
• W1997163886 title "Reducing the porosity and reflection loss of silicon nanowires by a sticky tape" @default.
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• W1997163886 doi "https://doi.org/10.1088/0957-4484/26/18/185601" @default.
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