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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1997180350> ?p ?o ?g. }

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• W1997180350 abstract "We report on the photodetecting properties of a ZnO-based thin-film transistor (TFT) that has been fabricated on a SiO2/p-Si substrate by rf magnetron sputtering at room temperature. Our ZnO-based TFT exhibited a saturation current level of about 6.5 μA under a gate bias of 40 V, decent electron mobility of 0.1 cm2/V s, and on/off current ratio of ∼106 in the dark. Illuminated by ultraviolet (λ=340 nm), blue (λ=450 nm), and green (λ=540 nm) light with intensity of 0.7 mW/cm2, our TFT displays high photocurrent gain of 50, 32, and 15 μA, respectively, under a gate bias of 40 V. In the channel depletion state with gate bias of −30 V, the photodetecting sensitivity becomes much higher than in the accumulation state. It is thus concluded that our ZnO-based TFT can be a good UV photodetecting device as well as an electronic device." @default.
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• W1997180350 date "2003-12-22" @default.
• W1997180350 modified "2023-10-16" @default.
• W1997180350 title "Photodetecting properties of ZnO-based thin-film transistors" @default.
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• W1997180350 doi "https://doi.org/10.1063/1.1633676" @default.
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