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- W1997220439 abstract "Electrical properties of YBa/sub 2/Cu/sub 3/O/sub 7-x/(YBCO) step-edge junctions were investigated. Steps of height approximately 90 nm were prepared on sapphire substrates by Ar milling. Step angles were adjusted by the angle of incidence of Ar ions. After vacuum deposition of the YSZ buffer layer (50 nm thick) an epitaxial YBCO film was grown by magnetron sputtering. Step edge junctions were prepared by wet etching. The current-voltage characteristics were of RSJ type, with I/sub c/R/sub n//spl ap/0.5 mV at 77 and Shapiro steps were observed up to 0.2 mV (at 9.2 GHz in the temperature range 4.2-80 K) and compared with the resistively shunted Josephson junction (RSJ) model including capacitance and noise.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W1997220439 date "1995-06-01" @default.
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- W1997220439 title "YBa/sub 2/Cu/sub 3/O/sub 7/(-x) step-edge junctions prepared on sapphire substrates with YSZ buffer layer" @default.
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- W1997220439 doi "https://doi.org/10.1109/77.403166" @default.
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