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- W1997249741 abstract "The continued scaling of CMOS devices to the sub-16 nm technology node will likely be achieved with new architectures, such as FinFETs and high mobility substrates, including compound semiconductors (III-V). At these technology nodes, abrupt channel doping profiles with high dopant activation will be needed under low thermal budget environments for III-V materials. Ion implantation into III-V materials presents a problem as it induces crystal damage, which can alter the stoichiometry in a manner that is difficult to recover. The residual damage can lead to higher junction leakage and lower dopant activation. This paper presents a potentially defect-free alternative, mono-layer doping (MLD), which utilizes wet processing techniques." @default.
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- W1997249741 date "2012-04-01" @default.
- W1997249741 modified "2023-09-25" @default.
- W1997249741 title "Achieving Ultra-Shallow Junctions in Future CMOS Devices by a Wet Processing Technique" @default.
- W1997249741 cites W2012487151 @default.
- W1997249741 doi "https://doi.org/10.4028/www.scientific.net/ssp.187.33" @default.
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