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- W1997339365 abstract "We fabricated crystalline germanium (c-Ge) heterojunction solar cells with a double heterostructure (DH) which consists of hydrogenated amorphous silicon (a-Si:H) layers. In the a-Si:H/c-Ge DH solar cell, the improvement of the conversion efficiency is obtained compared to the c-Ge solar cell having single heterostructure. We investigated effects of post-annealing on characteristics of Ge heterojunction solar cells. The open-circuit voltage ( V OC ) of Ge heterojunction solar cells increases with increasing post-annealing temperatures above 150 °C. The increase of V OC by post-annealing could be mainly explained by the improvement of passivation quality of a-Si:H for the c-Ge surface. Our results suggest that the a-Si:H double heterostructure is beneficial not only for c-Si-based heterojunction solar cells but also for c-Ge-based heterojunction solar cells." @default.
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- W1997339365 date "2013-03-21" @default.
- W1997339365 modified "2023-09-27" @default.
- W1997339365 title "Post-annealing Effects on Characteristics of Crystalline Germanium Solar Cells with the Double Heterostructure" @default.
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- W1997339365 doi "https://doi.org/10.7567/jjap.52.04cr04" @default.
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