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- W1997355265 abstract "We report a study on the growth and characterization of thick GaAsN epilayers and GaInNAs/GaAs multiquantum wells (MQW) grown on GaAs by GSMBE. (004) and (422) X-ray diffraction show the good crystalline quality of the coherently strained GaAsN epilayers with a nitrogen amount of 2.6%. Room temperature photoluminescence (RTPL) is observed for the ternary and the quaternary structures with a peak wavelength as long as 1.17 μm respectively. A post-growth in-situ or ex-situ annealing increases the RTPL peak intensity by a factor of up to 20 for the thick GaAsN layers and 10 for the GaInNAs/GaAs MQW. The annealing induces also a blue shift in the peak wavelength in both cases. Although SIMS measurements show locally well defined quantum wells, cross-section TEM observation points out long-range distortion of the GaInNAs/GaAs MQW structures." @default.
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- W1997355265 date "1999-11-01" @default.
- W1997355265 modified "2023-10-18" @default.
- W1997355265 title "Growth and Characterization of Thick GaAsN Epilayers and GaInNAs/GaAs Multiquantum Wells" @default.
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- W1997355265 doi "https://doi.org/10.1002/(sici)1521-396x(199911)176:1<279::aid-pssa279>3.0.co;2-z" @default.
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