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- W1997361975 abstract "We have measured sheet resistance and mobility changes for a series of In0.53Ga0.47As layers as a result of hydrogen, boron, and beryllium implantation. We find that boron and beryllium implantation can produce a two order‐of‐magnitude increase in sheet resistance due mainly to a decrease in mobility accompanied by a smaller decrease in the sheet carrier concentration. Hydrogen implantation results in a decrease in sheet resistance due to an increase in electron concentration accompanied by only a small mobility decrease. The increase in sheet resistance due to boron and beryllium implants is not large enough to have obvious application for device isolation." @default.
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- W1997361975 date "1986-07-15" @default.
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- W1997361975 title "Resistance and mobility changes in InGaAs produced by light ion bombardment" @default.
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- W1997361975 doi "https://doi.org/10.1063/1.337410" @default.
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