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- W1997362122 abstract "Abstract The two-dimensional electron gas (2DEG) mobility limited by dielectric and barrier thickness fluctuations (TF) scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs) is calculated. Calculation shows that thickness fluctuation scattering is the main limitation in Al2O3/AlGaN/GaN double heterojunction HEMTs with thin Al2O3 layer thicknesses. In addition, a study of 2DEG mobility as a function of 2DEG density, ns, shows that TF scattering acts as the main limitation when ns exceeds 2 × 1012 cm− 2. The results may be used to design HEMTs to obtain higher 2DEG mobilities by modulating the dielectric layer and barrier thicknesses or 2DEG density." @default.
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- W1997362122 date "2013-05-01" @default.
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- W1997362122 title "Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors" @default.
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