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- W1997375897 abstract "The use of multiple layers of self-organised InAs quantum dots as a very effective dislocation filter is demonstrated. In0.5Ga0.5As/GaAs quantum dot lasers grown directly on silicon substrates with the InAs quantum dot buffer layer exhibit substantially reduced threshold currents (Jth∼900 A/cm2), compared to devices grown on silicon without the dot buffer layer (Jth≥1500 A/cm2)." @default.
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- W1997375897 date "2006-01-01" @default.
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- W1997375897 title "Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon" @default.
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