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- W1997403169 abstract "With their potential for high scalability and density, resistive memories are foreseen as a promising technology that overcomes the physical limitations confronted by charge-based DRAM and flash memory. Yet, a main burden towards the successful adoption and commercialization of resistive memories is their low cell reliability caused by process variation and limited write endurance. Typically, faulty and worn-out cells are permanently stuck at either ‘0’ or ‘1’. To overcome the challenge, a robust error correction scheme that can recover from many hard faults is required. In this paper, we propose and evaluate RDIS, a novel scheme to efficiently tolerate memory stuck-at faults. RDIS allows for the correct retrieval of data by recursively determining and efficiently keeping track of the positions of the bits that are stuck at a value different from the ones that are written, and then, at read time, by inverting the values read from those positions. RDIS is characterized by a very low probability of failure that increases slowly with the relative increase in the number of faults. Moreover, RDIS tolerates many more faults than the best existing scheme-by up to 95% on average at the same overhead level." @default.
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- W1997403169 date "2012-06-01" @default.
- W1997403169 modified "2023-09-27" @default.
- W1997403169 title "RDIS: A recursively defined invertible set scheme to tolerate multiple stuck-at faults in resistive memory" @default.
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- W1997403169 doi "https://doi.org/10.1109/dsn.2012.6263949" @default.
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