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- W1997417866 abstract "Heterostructures formed by depositing in situ amorphous hydrogenated silicon-carbon alloys on Si(100) substrates were characterized by photoelectric-yield spectroscopy, UPS, and XPS. It is shown that both substrate and overlayer valence-band tops can be identified on the photoelectric-yield spectrum, thus allowing a direct and precise determination of the band lineup. We find a valence-band discontinuity varying from 0.44 eV to 1.00 eV for carbon content ranging from 0 to 50%. The present data can be used as a test for the lineup theories and strongly support the interface dipole models." @default.
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- W1997417866 date "1997-04-15" @default.
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- W1997417866 title "Electronic states and band lineups in c-Si(100)/a-<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Si</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant=normal>−</mml:mi><mml:mi mathvariant=normal>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>C</mml:mi…" @default.
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- W1997417866 doi "https://doi.org/10.1103/physrevb.55.9904" @default.
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