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- W1997418780 abstract "Photovoltaic (PV) schemes often encounter a pair of fundamentally opposing requirements on the thickness of semiconductor layer: a thicker PV semiconductor layer provides enhanced optical density, but inevitably increases the charge transport path length. An effective approach to solve this dilemma is to enhance the interface area between the terminal electrode, i.e., transparent conducting oxide (TCO) and the semiconductor layer. As such, we report a facile, template-assisted, and solution chemistry-based synthesis of 3-dimensional inverse opal fluorinated tin oxide (IO-FTO) electrodes. Synergistically, the photonic crystal structure possessed in the IO-FTO exhibits strong light trapping capability. Furthermore, the electrical properties of the IO-FTO electrodes are studied by Hall effect and sheet resistance measurement. Using atomic layer deposition method, an ultrathin TiO(2) layer is coated on all surfaces of the IO-FTO electrodes. Cyclic voltammetry study indicates that the resulting TiO(2)-coated IO-FTO shows excellent potentials as electrodes for electrolyte-based photoelectrochemical solar cells." @default.
- W1997418780 created "2016-06-24" @default.
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- W1997418780 date "2011-03-11" @default.
- W1997418780 modified "2023-09-26" @default.
- W1997418780 title "Three-Dimensional Photonic Crystal Fluorinated Tin Oxide (FTO) Electrodes: Synthesis and Optical and Electrical Properties" @default.
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- W1997418780 doi "https://doi.org/10.1021/am1012408" @default.
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