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• W1997487652 abstract "The effects of deposition gas pressure and H2 dilution ratio (H2/SiH4+CH4+H2), generally considered two of dominant parameters determining crystallinity in β-SiC thin films prepared by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD method, on the films properties have been systematically studied. As deposition gas pressure increase from 40 to 1000 Pa, the crystallinity of the films is improved. From the study of H2 dilution ratio, it is considered that H2 plays a role as etching gas and modulating the phases in β-SiC thin films. On the basis of the study on the parameters, nanocrystalline β-SiC films were successfully synthesized on Si substrate at a low temperature of 300°C. The Fourier Transform Infrared Spectroscopy (FTIR) and X-ray diffraction (XRD) spectra show formation of β-SiC. Moreover, according to Sherrer equation, the average grain size of the films estimated is in nanometer-size." @default.
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• W1997487652 date "2004-01-01" @default.
• W1997487652 modified "2023-10-15" @default.
• W1997487652 title "Parameters determining crystallinity in β-SiC thin films prepared by catalytic chemical vapor deposition" @default.
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• W1997487652 doi "https://doi.org/10.1016/j.jcrysgro.2003.08.026" @default.
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