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• W1997531967 abstract "ZnO:Zn phosphor thin films were prepared by ion beam assisted deposition (IBAD). Post-deposition annealing of these films was performed at temperature from 100°C to 1000°C in N2 and air, respectively. Several analysis techniques were employed to characterize their composition, structure and photoluminescence. Two different bands of luminescent peaks, which are UV/violet (380–420 nm) and blue/green (470–530 nm) luminescence, were found in the PL spectra of these films. The results show that the intensity of the blue/green light is strongly affected by the temperature of annealing which may result from the recovery of structural defects, the homogenization and the evaporation of excess Zn. However, the contributions of these processes are different at different temperature ranges. We also find that the films annealed in N2 ambient show stronger luminescent intensity than those in air ambient." @default.
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• W1997531967 date "2000-06-01" @default.
• W1997531967 modified "2023-10-16" @default.
• W1997531967 title "Characteristics of ZnO:Zn phosphor thin films by post-deposition annealing" @default.
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• W1997531967 doi "https://doi.org/10.1016/s0168-583x(00)00017-3" @default.
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