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- W1997540579 abstract "Cobalt silicide is investigated in view of possible application in a self-aligned technology. Extremely smooth, highly conductive CoSi <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> films are obtained using rapid thermal processing for silicide formation starting from deposited cobalt layers (on Si). The phase formation is studied by XRD and RBS. No lateral silicide formation is observed at contact edges. The influence of Si consumption and dopant behavior on diode performance is studied. Shallow arsenic (0.15 µm deep) and boron (0.3 µm deep) junctions are successfully silicided. Very low contact resistances are obtained between the silicide and n+ and p+ regions. MOS transistors were fabricated with CoSi <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> on the source, drain, and gate. An increase in current driving capability is noticed while no degradation of other electrical parameters due to the silicide processing steps is observed. At some critical points, comparison is made with the TiSi <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> process." @default.
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- W1997540579 date "1987-03-01" @default.
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- W1997540579 title "A self-aligned CoSi<sub>2</sub>interconnection and contact technology for VLSI applications" @default.
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- W1997540579 doi "https://doi.org/10.1109/t-ed.1987.22963" @default.
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