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• W1997584078 abstract "Dynamic reflectance anisotropy (RA) and simultaneous reflection high-energy electron diffraction intensity measurements on the gas source molecular-beam-epitaxy growth of Si and SiGe on Si(001) are presented for the first time. The RA signal was found to oscillate at a period corresponding to bilayer growth in both material systems, and it is explained in terms of a model based on the relative domain coverages and hence the Si dimer ``concentration'' in the two orthogonal $〈110〉$ azimuths." @default.
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• W1997584078 date "1995-04-17" @default.
• W1997584078 modified "2023-10-01" @default.
• W1997584078 title "Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001)" @default.
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• W1997584078 doi "https://doi.org/10.1103/physrevlett.74.3213" @default.
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