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- W1997678766 abstract "We investigate the patterning-accuracy limits of proximity-effectcorrected (PEC) electron-beam lithography applied to the fabricationof photonic crystals (PhC's). Energy-intensity distributionsimulations reveal that conventional dose-modulation PEC techniquespresent a lower limit of the best attainable hole-radius variation ofapproximately 1% for a generic PhC structure, while a PEC method proposed by Watson theoretically should yield perfect correction. Simulation results were verified experimentally and additionally we introduce a new method to determine the beam-broadening parameter α. We analyzed the impact of geometrical key parameters of PhC's on achievable patterning accuracy and showed that proximity effects impose severe limitations on the patterning of structures with large filling factors and/or small lattice constants. Furthermore, we performed a sensitivity analysis on the proximity parameters and showed that overestimation of the backscatter efficiency can actually improve the lithographic accuracy andmimic the Watson-PEC method to a certain degree." @default.
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- W1997678766 date "2004-03-25" @default.
- W1997678766 modified "2023-10-03" @default.
- W1997678766 title "Limitations of proximity-effect correction for electron-beam patterning of photonic crystals" @default.
- W1997678766 doi "https://doi.org/10.1117/12.522316" @default.
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