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• W1997697748 endingPage "153" @default.
• W1997697748 startingPage "139" @default.
• W1997697748 abstract "The influence of different junction current components (diffusion current for radiative and Auger 7 recombination mechanisms, tunneling and depletion layer currents) on the R0A product of n+-p -Hg1−xCdxTe photodiodes is considered. The considerations are carried out for the 77–300 K temperature region and 1–15 μm cutoff wavelength. Optimum doping concentrations in the p-type region of n+-p abrupt junctions are determined, taking into account the influence of the tunneling current and of a fixed surface charge density of the junction passivation layer. Results of calculations are compared with experimental data reported by many authors. An attempt is made to explain the discrepancy between theoretical calculations and experimental data." @default.
• W1997697748 created "2016-06-24" @default.
• W1997697748 creator A5082759235 @default.
• W1997697748 date "1988-05-01" @default.
• W1997697748 modified "2023-09-25" @default.
• W1997697748 title "Analysis of the R0A product in n+-p Hg1−xCdxTe photodiodes" @default.
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• W1997697748 doi "https://doi.org/10.1016/0020-0891(88)90002-4" @default.
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