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• W1997727369 abstract "In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111)B surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet." @default.
• W1997727369 created "2016-06-24" @default.
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• W1997727369 date "2014-10-20" @default.
• W1997727369 modified "2023-10-17" @default.
• W1997727369 title "Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy" @default.
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• W1997727369 doi "https://doi.org/10.1063/1.4898702" @default.
• W1997727369 hasPublicationYear "2014" @default.
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