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• W1997784440 abstract "We investigated the new materials applicable for the field effect passivation layer in crystalline Si solar cells, ZrO2-Al2O3 and ZrO2-Y2O3 binary systems, by using combinatorial synthesis method. As-deposited samples indicated hysteresis curves and flat band-voltage (VFB) shifts at capacitance-voltage (C-V) measurements. After oxygen gas annealing (OGA) at 700 oC for 5min, an improvement of the hysteresis and a positive shift of VFB were observed. OGA process influenced defects density related to decreasing oxygen vacancy. OGA processed ZrO2 incorporated with 20 % Al2O3 and 15 % Y2O3 structures showed the maximized negative fixed charge of -5.8 × 1012 cm-2 and -7.8 × 1012 cm-2 in each system, respectively, suggesting that the ZrO2 based alloy systems were revealed to be the promising material for the passivation in the solar cell application." @default.
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• W1997784440 date "2012-07-01" @default.
• W1997784440 modified "2023-10-16" @default.
• W1997784440 title "Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications" @default.
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• W1997784440 doi "https://doi.org/10.4028/www.scientific.net/msf.725.161" @default.
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