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• W1997785434 abstract "Kinetic study on chemical vapor deposition of tungsten silicide (CVD-WSix) by the mixture of WF6/SiH4 or WF6/Si2H6 was made using an externally heated tubular reactor. By investigating the effect of the film precipitation area on the gas phase volume ratio (the S/V ratio) in film formation, it can be concluded that the initial step of film precipitation was dominated by radical chain reaction. In addition, a new process to form WSix using preliminary excitation of gas phase reaction at the inlet of the reactor was proposed. Using this process, film composition was controlled and the formation of WSi2.5 films with excellent step coverage was realized." @default.
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• W1997785434 date "1995-10-01" @default.
• W1997785434 modified "2023-10-17" @default.
• W1997785434 title "Kinetic study of WSix-CVD processes—a comparison of WF6/SiH4 and WF6/Si2H6 reaction systems" @default.
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• W1997785434 doi "https://doi.org/10.1002/ecjb.4420781009" @default.
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