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- W1997789426 abstract "Ge1Sb2Te4-based chalcogenide random access memory array, with a tungsten heating electrode of 260 nm in diameter, is fabricated by 0.18-μm CMOS technology. Electrical performance of the device, as well as physical and electrical properties of Ge1Sb2Te4 thin film, is characterized. SET and RESET programming currents are 1.6 and 4.1 mA, respectively, when pulse width is 100 ns. Both the values are larger than those of the Ge2Sb2Te5-based ones with the same structure and contact size. Endurance up to 106 cycles with a resistance ratio of about 100 has been achieved." @default.
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- W1997789426 date "2007-02-19" @default.
- W1997789426 modified "2023-09-25" @default.
- W1997789426 title "Ge 1 Sb 2 Te 4 Based Chalcogenide Random Access Memory Array Fabricated by 0.18-μm CMOS Technology" @default.
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- W1997789426 doi "https://doi.org/10.1088/0256-307x/24/3/056" @default.
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