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• W1997798293 abstract "The use of monoethylarsine (MEAs) as an arsine alternative source in GaAs atomic layer epitaxy (ALE) is studied. We use x-ray photoelectron spectroscopy and reflection high- energy electron diffraction (RHEED) to characterize the surface reactions of MEAs on GaAs(001) Ga-rich surfaces. At substrate temperatures between 320 and 540 °C, no carbon-related species are observed. At Ts=320 °C and an exposure of 100 L of MEAs, AsHx (x=1 or 2) is thought to be the adsorbed arsenic species. However, arsenic atoms are formed if a longer exposure time or a larger injection level is applied. As the substrate temperature increases As-rich surfaces are readily obtained with an improved RHEED 2×4 pattern. Two reaction steps are proposed. It is suggested that the reaction leading to AsHx species is the rate-limiting step. AsHx pairs react to form arsenic atoms by H2 release. Judging from the existence of intermediate AsHx species and the easier cleavage of As-ethyl bond, MEAs is believed to be a promising candidate as an arsenic source in GaAs ALE.&lt;lz&gt; &lt;lz&gt;" @default.
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• W1997798293 date "1991-04-22" @default.
• W1997798293 modified "2023-09-23" @default.
• W1997798293 title "Surface reactions in the atomic layer epitaxy of GaAs using monoethylarsine" @default.
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• W1997798293 doi "https://doi.org/10.1063/1.105083" @default.
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