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- W1997816848 abstract "The lithography prognosticator of the early 1980's declared the end of optics for sub-0.5mm imaging. However, significant improvements in optics, photoresist and masktechnology continued through the mercury lamp lines (436, 405 & 365nm) and into laserbands of 248nm and to 193nm. As each wavelength matured, innovative opticalsolutions and further improvements in photoresist technology have demonstrated thatextending imaging resolution is possible thus further reducing k 1 . Several author haverecently discussed manufacturing imaging solutions for sub-0.3k 1 and the integrationchallenges.Our industry will continue to focus on the most cost effective solution. Whatcontinues to motivate lithographers to discover new and innovative lithographysolutions? The answer is cost. Recent publications have demonstrated sub 0.30 k 1 imaging. The development of new tooling, masks and even photoresist platforms impactscost. The switch from KrF to ArF imaging materials has a significant impact on processintegration.This paper will focus on the need to increase the refractive index of ArF photoresistsystems to enhance process capability for ultra-high NA's that are near the limitation ofthe immersion fluid. Data will be presented demonstrating the impact of higher refractiveindex photoresist systems have on the further extension of ArF Immersion. AdvancedRET's will be incorporated to further explore improvements in critical imaging levelsalong with dominant mask effects." @default.
- W1997816848 created "2016-06-24" @default.
- W1997816848 creator A5081755546 @default.
- W1997816848 date "2007-03-16" @default.
- W1997816848 modified "2023-09-26" @default.
- W1997816848 title "The application of high-refractive index photoresist for 32-nm device level imaging" @default.
- W1997816848 doi "https://doi.org/10.1117/12.714315" @default.
- W1997816848 hasPublicationYear "2007" @default.
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