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- W199785003 abstract "The use of mismatched layers are attracting an increasing interest for fabrication of devices. Such devices have a potential for faster switching times and higher efficiency than the conventional devices. For device performance it is crucial to have perfect control of the growth of the mismatched layers. Misfit dislocations are normally connected to mismatched layers and the dislocations tend to deteriorate the performance of the devices. In this chapter we will discus the growth and characterisation of mismatched layers. We will also discuss the generation of misfit dislocations, strain induced effects on the energy gap and the use of mismatched layers in devices. As a model system for the mismatched layers in this work GaP/GaAs was chosen, mainly because its attractive spectroscopic properties." @default.
- W199785003 created "2016-06-24" @default.
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- W199785003 date "1991-01-01" @default.
- W199785003 modified "2023-09-27" @default.
- W199785003 title "Characterisation of Mismatched Epitaxial Layers Grown by Metal-Organic Vapour Phase Epitaxy" @default.
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- W199785003 doi "https://doi.org/10.1016/b978-0-444-88990-4.50007-6" @default.
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