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- W1997897101 abstract "Silicon materials compensated by deep level impurities such as nickel and gold have negative temperature coefficient (NTC) characteristics. In this work, n-type silicon wafers are smeared by nickel chloride ethanol solution and gold chloric acid ethanol solution, and subsequently put in the opening environment to heat. The electrical resistance and B-value of the thermistors made by this silicon material are measured and analyzed. When the silicon surface concentration of gold atoms is 2 × 10−6 mol/cm2, the uniformity of the single-crystal silicon material is optimal. When the diffusion temperature is between 900 and 1000 °C, a material with high B-value and low electrical resistivity is obtained. The B–T and R–T change laws calculated by the theory of semiconductor deep level energy are basically consistent with the experimental results." @default.
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- W1997897101 date "2009-08-01" @default.
- W1997897101 modified "2023-10-16" @default.
- W1997897101 title "NTC and electrical properties of nickel and gold doped n-type silicon material" @default.
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- W1997897101 doi "https://doi.org/10.1088/1674-4926/30/8/083007" @default.
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