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• W1997940690 abstract "Radiation damage in Li4SiO4 and Li3.7Al0.1SiO4 irradiated with 120 MeV oxygen ions was investigated by measuring the ionic conductivity and the Raman spectra. The conductivity of Li4SiO4 in the post irradiation condition increased with the fluence in the temperature range 413 to 613 K. On the other hand, the conductivity of Li3.7Al0.1SiO4 in the post-irradiation condition increased slightly with the fluence in the temperature range 373 to 413 K but hardly changed in the temperature range 443 to 503 K. These conductivity changes were attributed to introduction of the lithium-ion vacancies due to the irradiation. The lithium-ion vacancies were recovered at the temperatures in the range 450 to 473 K for Li3.7Al0.1SiO4, but were not recovered up to 673 K for Li4SiO4. It was seen from the Raman spectra that oxygen atoms of SiO4 tetrahedra in Li4SiO4 were displaced by the irradiation. Such irradiation defects relating to the SiO4 tetrahedra can be recovered by the annealing up to 573 K." @default.
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• W1997940690 date "1992-09-01" @default.
• W1997940690 modified "2023-09-25" @default.
• W1997940690 title "Radiation damage in pure and Al-doped Li4SiO4" @default.
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• W1997940690 doi "https://doi.org/10.1016/s0022-3115(09)80044-5" @default.
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